DocumentCode :
2610862
Title :
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors
Author :
Paussa, Alan ; Conzatti, Francesco ; Breda, Dimitri ; Vermiglio, Rossana ; Esseni, David
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
299
Lastpage :
302
Abstract :
This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.
Keywords :
MOSFET; eigenvalues and eigenfunctions; finite difference methods; nanoelectronics; CPU time; eigenvalue problems; finite difference methods; n-MOS transistors; nanoscale MOS transistors; numerical efficiency; p-MOS transistors; pseudospectral method; quantization effect modelling; Chebyshev approximation; Eigenvalues and eigenfunctions; Mathematical model; Nanowires; Polynomials; Quantization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604499
Filename :
5604499
Link To Document :
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