Title :
Polytype InAs/AlSb/GaSb for field-effect transistor applications
Author :
Longenbach, K.F. ; Li, X. ; Wang, Y. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
Recent results on heterostructure field effect transistors (HFETs) based upon the InAs/AlSb/GaSb material system are reviewed. Both n- and p-channel HFET structures based on the InAs/AlSb/GaSb material system have been demonstrated. The GaSb p-channel devices exhibit transconductances superior to that of any other III-V based p-channel device and show promise for future integration with an InAs channel device to form a complementary heterostructure technology. InAs channel devices have also exhibited high transconductances and low output conductances, and predicted cutoff frequencies are at least twice as high as for GaAs-based FETs. Thus, these InAs n-channel HFETs alone show promise for room temperature microwave applications. Further progress in the molecular beam epitaxy (MBE) growth and processing of these device structures should bring about further improvements in device performance
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; GaSb channel devices; HFETs; InAs channel devices; InAs-AlSb-GaSb; MBE; MODFETs; complementary heterostructure technology; cutoff frequencies; heterostructure field effect transistors; molecular beam epitaxy; n-channel HFETs; output conductances; p-channel HFET structures; p-channel devices; room temperature microwave applications; semiconductors; transconductances; FETs; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Satellites; Substrates; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.169995
