Title :
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs
Author :
Zhao, Kai ; Hong, Sung-Min ; Jungemann, Christoph ; Han, Ru-qi
Abstract :
Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; maximum entropy methods; silicon; transforms; 1D Schrödinger; 2D Poisson equation; H-transformation; Si; deterministic multisubband Boltzmann solver; drain bias conditions; maximum entropy dissipation scheme; silicon double-gate nMOSFET; subthreshold characteristics; Convergence; Distribution functions; Electric potential; Logic gates; MOSFETs; Mathematical model; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604500
