Junctions made using pCdTe films grown with ion-assisted doping [solar cells]

This work is part of a continuing study of p-CdTe thin films grown by ion-assisted doping during vacuum evaporation. Ion-assisted doping has clearly demonstrated an ability to control the carrier density in p-CdTe. Results are reported from In/p-CdTe Schottky barriers and from n-CdS/p-CdTe heterojunctions prepared with a systematic variation in the p-CdTe carrier density. The ion-assisted doping process itself appears to be responsible for a decrease in the J_sc through a reduction in the minority carrier lifetime and in the interface collection function h(0). J_sc increased through the use of a two-layer CdTe structure in which undoped CdTe is at the CdS/CdTe interface