Title :
Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation
Author :
Sasso, G. ; Rinaldi, N. ; Matz, G. ; Jungemann, C.
Author_Institution :
Dept. of Biomed., Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
Abstract :
Effective density of state, saturation velocity and high field mobility analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors have been derived.
Keywords :
Ge-Si alloys; carrier mobility; electronic density of states; heterojunction bipolar transistors; high field effects; semiconductor device models; semiconductor heterojunctions; semiconductor materials; SiGe; effective DOS; effective density of states; heterojunction bipolar transistors; high-field mobility; hydrodynamic simulation; saturation velocity; silicon-germanium HBT; Analytical models; Computational modeling; Force; Lattices; Semiconductor process modeling; Silicon; Silicon germanium; Device Simulation; Effective DOS; High-Field Mobility; Saturation Velocity; SiGe HBTs; TCAD;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604505
