DocumentCode
2610974
Title
Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation
Author
Sasso, G. ; Rinaldi, N. ; Matz, G. ; Jungemann, C.
Author_Institution
Dept. of Biomed., Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
279
Lastpage
282
Abstract
Effective density of state, saturation velocity and high field mobility analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors have been derived.
Keywords
Ge-Si alloys; carrier mobility; electronic density of states; heterojunction bipolar transistors; high field effects; semiconductor device models; semiconductor heterojunctions; semiconductor materials; SiGe; effective DOS; effective density of states; heterojunction bipolar transistors; high-field mobility; hydrodynamic simulation; saturation velocity; silicon-germanium HBT; Analytical models; Computational modeling; Force; Lattices; Semiconductor process modeling; Silicon; Silicon germanium; Device Simulation; Effective DOS; High-Field Mobility; Saturation Velocity; SiGe HBTs; TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604505
Filename
5604505
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