Title :
TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction
Author :
Jaud, Marie-Anne ; Scheiblin, Pascal ; Martinie, Sébastien ; Cassé, Mikaël ; Rozeau, Olivier ; Dura, Julien ; Mazurier, Jérôme ; Toffoli, Alain ; Thomas, Olivier ; Andrieu, François ; Weber, Olivier
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
We present TCAD simulations based on advanced mobility modeling including Surface Roughness (SR) and Remote Coulomb Scattering (RCS) effects, quantum correction and short channel effects. From these calibrated models, FDSOI 6T-SRAM cells are simulated and compared to experimental data. The very good agreement achieved between simulations and electrical data on both mobility and electrical figures of merit (device and SRAM) offers major opportunities for predictive design based on TCAD simulations.
Keywords :
SRAM chips; carrier mobility; integrated circuit design; integrated circuit modelling; quantum interference phenomena; silicon-on-insulator; surface roughness; technology CAD (electronics); 6T-SRAM cell characteristics prediction; FDSOI technology; TCAD simulations; advanced mobility modeling; electrical figure of merit; fully depleted silicon on insulator; mobility figure of merit; predictive design; quantum correction effects; remote Coulomb scattering effects; short channel effects; surface roughness effects; technology computer-aided design; Computer architecture; Data models; Logic gates; Noise; Random access memory; Semiconductor process modeling; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604506
