Title :
AlGaAs/GaAs HBT for linear and saturated power application
Author :
Wang, N.L. ; Ho, W.J. ; Higgins, J.A.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The excellent performance of heterojunction bipolar transistors (HBTs) in both linear and saturated power applications is demonstrated theoretically. Excellent uniformity in transistor parameters and breakdown voltage is also found. Optical lithography on 2-μm minimum feature size makes the throughput and the yield high. A high-efficiency 0.7-W common base power HBT for X-Ku band application is reported
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power transistors; solid-state microwave devices; 0.7 W; 2 micron; AlGaAs-GaAs; HBT; Ku-band; SHF; X-band; breakdown voltage; common base power HBT; heterojunction bipolar transistors; high-efficiency HBT; linear power application; minimum feature size; performance; saturated power application; semiconductors; throughput; transistor parameters; yield; Communication system control; FETs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Linearity; MESFETs; Temperature; Testing; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.169996
