AlGaAs/GaAs HBT for linear and saturated power application

Author

Wang, N.L. ; Ho, W.J. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

280

Lastpage

286

Abstract

The excellent performance of heterojunction bipolar transistors (HBTs) in both linear and saturated power applications is demonstrated theoretically. Excellent uniformity in transistor parameters and breakdown voltage is also found. Optical lithography on 2-μm minimum feature size makes the throughput and the yield high. A high-efficiency 0.7-W common base power HBT for X-Ku band application is reported

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power transistors; solid-state microwave devices; 0.7 W; 2 micron; AlGaAs-GaAs; HBT; Ku-band; SHF; X-band; breakdown voltage; common base power HBT; heterojunction bipolar transistors; high-efficiency HBT; linear power application; minimum feature size; performance; saturated power application; semiconductors; throughput; transistor parameters; yield; Communication system control; FETs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Linearity; MESFETs; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.169996

Filename

169996