DocumentCode :
2611024
Title :
Multiphysics modeling of PCM devices for scaling investigation
Author :
Ferrari, G. ; Ghetti, A. ; Ielmini, D. ; Redaelli, A. ; Pirovano, A.
Author_Institution :
Politec. di Milano, Milan, Italy
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
265
Lastpage :
268
Abstract :
A multiphysics model for Phase Change Memory (PCM) is calibrated on a large set of experimental data. Critical material and interface properties such as electrical and thermal resistivities and their dependence on temperature are extracted from data or fitting electrical characteristics with numerical simulations. The model is shown to match with a unique set of parameters experimental data from 90 nm and 45 nm technology nodes. The calibrated model is then exploited to perform a sensitivity analysis of key cell characteristics to geometry and material properties variations. Furthermore, the model is used to predict performance of a scaled down cell suitable for the 32 nm technology node and the results demonstrate the consistent scalability of PCM with respect to the technology node.
Keywords :
antimony compounds; chalcogenide glasses; electrical conductivity; germanium compounds; numerical analysis; phase change materials; semiconductor device models; tellurium compounds; thermal conductivity; Ge2Te2Sb5; PCM devices; cell characteristics; electrical resistivities; interface properties; numerical simulations; phase change memory; scaling investigation; sensitivity analysis; size 32 nm; size 45 nm; size 90 nm; thermal resistivities; Conductivity; Electrical resistance measurement; Numerical models; Phase change materials; Resistance; Resistance heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604509
Filename :
5604509
Link To Document :
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