Title :
Hot electron effects on AlGaAs/InGaAs/GaAs PHEMT´s under accelerated DC stresses and comparison with InGaP PHEMT´s
Author :
Huang, Hou Kuei ; Wang, C.S. ; Wang, Y.H.
Keywords :
Acceleration; Acoustical engineering; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; PHEMTs; Stress;
Conference_Titel :
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN :
0-7908-0104-3
DOI :
10.1109/GAASRW.2003.183767
