Title :
Modeling of the voltage snap-back in amorphous-GST memory devices
Author :
Rudan, M. ; Giovanardi, F. ; Tsafack, T. ; Xiong, F. ; Piccinini, E. ; Buscemi, F. ; Liao, A. ; Pop, E. ; Brunetti, R. ; Jacoboni, C.
Author_Institution :
Adv. Res. Center on Electron. Syst. (ARCES), Univ. of Bologna, Bologna, Italy
Abstract :
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.
Keywords :
antimony compounds; chalcogenide glasses; germanium compounds; phase change memories; tellurium compounds; Ge2Sb2Te5; amorphous chalcogenide-GST; amorphous-GST memory devices; band electron motion; charge transport; field-induced emission; trap-to-band transitions; trapped electron hopping; voltage snap-back; Electron traps; Energy states; Limiting; Materials; Mathematical model; Resistance; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604511
