DocumentCode :
2611071
Title :
Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings
Author :
Nguyen, C.D. ; Kuligk, A. ; Vexler, M.I. ; Klawitter, M. ; Beyer, V. ; Melde, T. ; Czernohorsky, M. ; Meinerzhagen, B.
Author_Institution :
BST, Tech. Univ. Braunschweig, Braunschweig, Germany
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
261
Lastpage :
264
Abstract :
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.
Keywords :
NAND circuits; flash memories; hot carriers; random-access storage; semiconductor process modelling; NAND flash memory strings; hot electron induced mechanism; nonvolatile memories; physical simulation; program disturb mechanism; Doping; Electric potential; Logic gates; Programming; Semiconductor process modeling; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604512
Filename :
5604512
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2611071
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