DocumentCode
2611077
Title
Role of carrier depletion effects and material properties in advanced microscale thermal modeling of GalnP/pGaAs heterojunction bipolar transistor (HBT) devices
Author
Madra, Satbir
fYear
2003
fDate
2003
Firstpage
71
Lastpage
81
Keywords
Bonding; Carbon dioxide; Conducting materials; Finite difference methods; Gallium arsenide; Heterojunction bipolar transistors; Material properties; Molecular beam epitaxial growth; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN
0-7908-0104-3
Type
conf
DOI
10.1109/GAASRW.2003.183768
Filename
1397321
Link To Document