Title :
Role of carrier depletion effects and material properties in advanced microscale thermal modeling of GalnP/pGaAs heterojunction bipolar transistor (HBT) devices
Keywords :
Bonding; Carbon dioxide; Conducting materials; Finite difference methods; Gallium arsenide; Heterojunction bipolar transistors; Material properties; Molecular beam epitaxial growth; Temperature; Thermal conductivity;
Conference_Titel :
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN :
0-7908-0104-3
DOI :
10.1109/GAASRW.2003.183768
