DocumentCode
2611101
Title
A systematic approach of statistical modeling and its application to CMOS circuits
Author
Chen, Jim ; Styblinski, M.A.
Author_Institution
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fYear
1993
fDate
3-6 May 1993
Firstpage
1805
Abstract
A systematic approach of statistical modeling is developed to analyze and model statistical variations of CMOS transistor model parameters for statistical circuit simulation. The proposed methodology is based on several standard statistical techniques, and its accuracy and efficiency are verified by several examples. The efficiency of the method lies in the reduction of dimensions of parameter space without losing much statistical information
Keywords
CMOS integrated circuits; circuit analysis computing; integrated circuit modelling; network parameters; statistical analysis; CMOS circuits; circuit simulation; parameter space; statistical information; statistical modeling; statistical variations; transistor model parameters; Circuit simulation; Circuit synthesis; Fabrics; Integrated circuit modeling; Minimization methods; Principal component analysis; Production; Scattering parameters; Semiconductor device modeling; Yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-1281-3
Type
conf
DOI
10.1109/ISCAS.1993.394096
Filename
394096
Link To Document