DocumentCode
2611107
Title
4-cm2 CuInGaSe2 based solar cells
Author
Stewart, J.M. ; Chen, W.S.
fYear
1990
fDate
21-25 May 1990
Firstpage
535
Abstract
Polycrystalline thin-film solar cells with the structure ZnO/CdZnS/CuInGaSe2 have been fabricated with larger single-cell areas than have been previously reported. A cell with an area of 4 cm2 has been made with an AM1.5, 100 mW/cm2 total area conversion efficiency of 11.1% (12.0% active area) and an AM0 conversion efficiency of 10.0% (10.9% active area). The CuInGaSe 2 layer had a gallium to indium ratio of 0.26:0.74 with a bandgap of approximately 1.15 eV. The cells use an isolated tab design for the negative (grid) contact, demonstrating the ability to pattern the semiconductor layers. Such CuInGaSe2-based cells may be suitable for large-area terrestrial applications and for single-junction space cell applications
Keywords
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; 11.1 percent; ZnO-CdZnS-CuInGaSe2 thin film solar cells; bandgap; isolated tab design; negative contact; Argon; Chemical processes; Conductivity; Fabrication; Gallium compounds; Large-scale systems; Photonic band gap; Photovoltaic cells; Sputtering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111679
Filename
111679
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