2611140

Reliability investigation of 0.25 μm AlGaN/GaN HEMTs under elevated temperature lifetesting

Chou, Y.C. ; Smorchkova, I. ; Leung, D. ; Wojitowicz, M. ; Grundbacher, R. ; Callejo, L. ; Kan, Q. ; Lai, R. ; Liu, P.H. ; Eng, D. ; Tsai, R. ; Oki, A.

2003

2003

137

153

Aluminum gallium nitride; Degradation; Electrons; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Space technology; Stress; Temperature;

English

ieee

GaAs Reliability Workshop, 2003. Proceedings

0-7908-0104-3

conf

10.1109/GAASRW.2003.183772

1397329