Reliability investigation of 0.25 μm AlGaN/GaN HEMTs under elevated temperature lifetesting

Author

Chou, Y.C. ; Smorchkova, I. ; Leung, D. ; Wojitowicz, M. ; Grundbacher, R. ; Callejo, L. ; Kan, Q. ; Lai, R. ; Liu, P.H. ; Eng, D. ; Tsai, R. ; Oki, A.

fYear

2003

fDate

2003

Firstpage

137

Lastpage

153

Keywords

Aluminum gallium nitride; Degradation; Electrons; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Space technology; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2003. Proceedings

Print_ISBN

0-7908-0104-3

Type

DOI

10.1109/GAASRW.2003.183772

Filename

1397329

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