• DocumentCode
    2611152
  • Title

    Correlations of single-crystal CuInSe2 surface processing with defect levels and cell performance

  • Author

    Abou-Elfotouh, F. ; Kazmerski, L. ; Bakry, A. ; Al-Douri, A.

  • Author_Institution
    Solar Energy Res. Inst., Golden, CO, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    541
  • Abstract
    The surface treatments include polishing, etching, and annealing, In particular, high-resolution photoluminescence (PL) and deep-level transient spectroscopy (DLTS) are used to identify the dominant defect states in cleaved and processed solar (cell structures (including heterostructure formation with (Cd,Zn)S and Schottky barriers with Al on p-CuInSe2 single crystals). These results are correlated with the junction electrical characteristics. Atomic-level images using spectroscopic scanning tunneling microscopy (SSTM) confirm the physical nature of the defect levels. Radiative recombination levels originating from the processing are identified near the surface region of the CuInSe 2 crystals. The energy and depth locations of these states that evolve from the formation of a defect nonstoichiometric interfacial layer can limit the performance of the (Cd,Zn)S2 single crystal CuInSe2 cells. The four major trapping levels have been confirmed by DLTS measurements. Two of these are shallow levels in the energy regions 100-114 and 150-185 meV, and two are deep levels in the range 340-385 and 475-496 meV, respectively
  • Keywords
    Schottky effect; annealing; copper compounds; deep level transient spectroscopy; defect electron energy states; etching; indium compounds; luminescence of inorganic solids; photoluminescence; polishing; scanning tunnelling microscopy; solar cells; ternary semiconductors; CuInSe2 solar cells; CuInSe2-Al; Schottky barriers; annealing; atomic level images; deep-level transient spectroscopy; defect levels; defect nonstoichiometric interfacial layer; defect states; etching; heterostructure formation; high-resolution photoluminescence; junction electrical characteristics; polishing; radiative recombination levels; single-crystal CuInSe2; spectroscopic scanning tunneling microscopy; surface processing; Annealing; Atomic measurements; Crystals; Electric variables; Etching; Photoluminescence; Photovoltaic cells; Schottky barriers; Spectroscopy; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111680
  • Filename
    111680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2611152