Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

We have developed a stochastic model of the resistive switching mechanism in resistive random access memory (RRAM) based on electron hopping. The distribution of electron occupation probabilities obtained with our approach is in good agreement with previous work. In particular, a low occupation region is formed near the cathode for bipolar switching behavior or near the anode for unipolar switching behavior. This result indicates that a decrease of the switching time with increasing temperature cannot be explained only by reduced occupations of the vacancies in the low occupation region, but is related to an increase of the mobility of the oxide ions. A hysteresis cycle of RRAM switching simulated with our stochastic model is in good agreement with experimental results.