Title :
Options for fabrication and design of CuInSe2 based solar cells
Author :
Birkmire, R. ; Shafarmna, W.N. ; Varrin, R., Jr.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Three options for the fabrication and design of CuInSe2-based solar cells are presented. Single-phase CulnSe 2 films have been deposited in a closed-loop selenization reaction system using Se to convert Cu/In layers. The system operates as a thermosiphon to circulate Ar gas containing elemental Se across the substrates, which eliminates the hazards associated with H2Se gas. An approach to increasing VOC without loss in JSC using a thin higher bandgap Cu(InGa)Se2 layer deposited on the CuInSe2 is demonstrated. Devices with VOC~0.5 V and collection to 1.0 eV have been fabricated. CuInSe2/CdS cells in a superstrate configuration have been fabricated by depositing CuInSe2, on a glass/ITO/CdS substrate. Cells with efficiencies near 6% have been made with a JSC comparable to high-efficiency cells, but the present devices have a VOC<0.35 V
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; semiconductor growth; solar cells; ternary semiconductors; vapour deposition; Ar gas; CuInSe2 solar cells; CuInSe2-CdS solar cells; closed-loop selenization reaction; fabrication; glass/ITO/CdS substrate; thermosiphon; Annealing; Argon; Commercialization; Fabrication; Glass; Hazards; Indium tin oxide; Leg; Photovoltaic cells; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111682
