Title :
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs
Author :
Verzellesi, G. ; Mazzanti, A. ; Canali, C. ; Meneghesso, G. ; Chini, A. ; Zanoni, E.
Keywords :
Aluminum gallium nitride; Dispersion; FETs; Gallium nitride; HEMTs; Impact ionization; MODFETs; Polarization; Pulse measurements; Temperature measurement;
Conference_Titel :
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN :
0-7908-0104-3
DOI :
10.1109/GAASRW.2003.183773
