• DocumentCode
    2611230
  • Title

    Via Resistance as a Technique to Control the Electromigration of Non-Overlap Via Holes

  • Author

    Rathore, Hazara Singh

  • Author_Institution
    IBM General Technology Division, Route 52, Hopewell Junction, New York 12533, (914- (914) 897-7925
  • fYear
    1982
  • fDate
    30011
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    The via hole in non-overlap vias is larger than the width of the underlaying metal stripe. The upper metal thins down along the slope of the via hole. The extent of thinning depends upon the angle of the via. The reliability of the via can be assured by the control of the slope of the RIE or wet etched via, but this needs SEM analysis which is not possible on a manufacturing line. A series of life test experiments by the step stress method showed that via chains with high resistance resulted in early fails due to electromigration at the thinned down portion of via, and via chains with normal resistance showed good reliability. The results showed that via reliability can be maintained by controlling the via chain resistance below specified limit during the processing of the semiconductor products.
  • Keywords
    Circuit testing; Electromigration; Fabrication; Glass; Integrated circuit interconnections; Planarization; Scanning electron microscopy; Semiconductor device testing; Sputter etching; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1982. 20th Annual
  • Conference_Location
    San Diego, NV, USa
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1982.363025
  • Filename
    4208427