DocumentCode
2611313
Title
A New Latent Failure Mechanism for Schottky Barrier Diodes with Al-Cu-Si Metallurgy
Author
Kim, Sang U.
Author_Institution
IBM General Technology Division, Essex Junction, VT 05452, (802) 769-4221
fYear
1982
fDate
30011
Firstpage
98
Lastpage
105
Abstract
The defect responsible for anomalous leakage current in Al-Cu-Si metallized Schottky barrier diodes has been found. The defect is designated the "CuAl2/Si defect." A new latent failure mechanism associated with CuAl2/Si defects and inherent Schottky instability is modelled. Its ramification for Schottky reliability has been established. The nature of the defect, its formation, and leakage mechanism are given.
Keywords
Copper; Crystallization; Failure analysis; Leakage current; Metallization; Schottky barriers; Schottky diodes; Silicon; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.363029
Filename
4208431
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