Title :
Status of the direct solidification of silicon wafers by RAFT
Author :
Beck, A. ; Geissler, J. ; Helmreich, D.
Author_Institution :
Heliotronic GmbH, Burghausen, Germany
Abstract :
Aspects and limits of the ramp-assisted foil-casting technique (RAFT) have been studied in a continuously operating. prototype. Information on the practicability and technical feasibility of RAFT has been obtained for large-scale operation. In order to facilitate this transfer, a standard ramp system is defined together with pertinent process parameters
Keywords :
elemental semiconductors; semiconductor technology; silicon; solidification; Si wafers; ramp-assisted foil-casting; solidification; Coatings; Crystallization; Geometry; Heat transfer; Large-scale systems; Prototypes; Semiconductor films; Silicon; Standards development; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111689
