Title :
Strain effects on hole current in silicon nanowire FETs
Author :
Minari, Hideki ; Kitayama, Tatsuro ; Yamamoto, Masahiro ; Mori, Nobuya
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
Hole transport simulation based on the nonequilibrium Green´s function and tight-binding formalism has been performed for strained Si nanowire FETs with a diameter of 1.5nm and 2.5 nm. Simulation results show that for Si nanowire FETs with a diameter of 2.5 nm, the compressive strain enhances the ballistic hole current, while the tensile strain gives opposite results. For Si nanowire FETs with a diameter of 1.5 nm, the ballistic hole current hardly depends on the strain magnitude.
Keywords :
Green´s function methods; compressive strength; elemental semiconductors; field effect transistors; nanowires; silicon; tensile strength; Si; compressive strain; hole current; hole transport simulation; nonequilibrium Green function; silicon nanowire FET; size 1.5 nm; size 2.5 nm; strain effects; tensile strain; tight-binding formalism; Dispersion; FETs; Logic gates; Nanoscale devices; Silicon; Tensile strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604528
