DocumentCode :
2611387
Title :
Precision Temperature Profiling in Highly Accelerated VLSI Life Test
Author :
Yu, Chen Cheng ; Swinton, Alexander J.
Author_Institution :
International Business Machines Corporation, All/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
fYear :
1982
fDate :
30011
Firstpage :
140
Lastpage :
143
Abstract :
Discrete devices under high electrical stress can produce nonuniform junction temperature in a chip. Knowledge of precise junction temperature is essential for accurate reliability projection, since most failure mechanisms are highly temperature activated. Thermal conduction equations are solved analytically with appropriate boundary conditions for junction temperature calculation. Experiments performed on test chips show good correlation.
Keywords :
Boundary conditions; Equations; Failure analysis; Life estimation; Life testing; Performance evaluation; Temperature; Thermal conductivity; Thermal stresses; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1982.363034
Filename :
4208436
Link To Document :
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