Title :
Development of the EPR technology for an oriented crystal growth semiconductor wafers
Author :
Chibani, A. ; Sof, S. ; Hamoud, M. ; Gauthier, R. ; Pinard, P. ; Masri, K.
Author_Institution :
Lab. Phys. de la Matiere, Villeurbanne, France
Abstract :
The electron powder ribbon (EPR) method uses an electron beam irradiation of silicon and germanium powders to manufacture 4 cm×2 cm polycrystalline flat plates with a 200 μm thickness. The apparatus uses a triode electron gun to deposit an energy of between 50 and 500 W/mm2 in a high-cryogenics vacuum (10-7 torr). The new generation of EPR platelets is produced by one step crystallization. The crystal growth orientations are studied, and a computer aided driving of the electron beam to obtain linear temperature profiles and eliminate the stresses is developed
Keywords :
crystal growth from melt; electron beam applications; elemental semiconductors; germanium; powder technology; semiconductor growth; silicon; 10-7 torr; Ge; Si; electron beam irradiation; electron powder ribbon method; high-cryogenics vacuum; linear temperature profiles; oriented crystal growth; polycrystalline flat plates; semiconductor wafers; triode electron gun; Crystallization; Electron beams; Elementary particle vacuum; Germanium; Manufacturing; Paramagnetic resonance; Powders; Silicon; Stress; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111692
