Title :
Improved contact metallization for high efficiency EFG polycrystalline silicon solar cells
Author :
Dubé, C. ; Gonsiorawski, R.
Author_Institution :
Mobil Solar Energy Corp., Billerica, MA, USA
Abstract :
Improvements in the performance of polycrystalline silicon solar cells based on a novel, laser-patterned contact process are described. Small lots of cells having an average conversion efficiency of 14+%, with several cells approaching 15%, are reported for cells of 45 cm2 area. The high-efficiency contact design is based on YAG laser patterning of the silicon nitride antireflection (AR) coating. The Cu metallization is done using light-induced plating, with the cell providing the driving voltage for the plating process. The Cu electrodeposits into the laser-defined windows in the AR coating for reduced contact area, after which it bridges on top of the Ar coating to form a continuous finger pattern. The higher cell conversion efficiency is attributed to reduced shadow loss, higher junction quality, and reduced metal-semiconductor interfacial area
Keywords :
copper; elemental semiconductors; laser beam applications; metallisation; silicon; solar cells; 14 to 15 percent; Cu; Cu metallization; Si solar cells; YAG laser patterning; antireflection coating; contact metallization; high efficiency EFG polycrystalline silicon solar cells; higher junction quality; laser-patterned contact process; light-induced plating; reduced metal-semiconductor interfacial area; reduced shadow loss; Coatings; Copper; Metallization; Photovoltaic cells; Pulsed laser deposition; Radiative recombination; Semiconductor lasers; Sheet materials; Silicon; Surface emitting lasers;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111695
