DocumentCode :
261155
Title :
Increasing the speed and reducing a sensing delay of content addressable memory
Author :
Pavithra, N. ; Shalini, E. ; Babu, C. Ganesh
Author_Institution :
Dept. of ECE, Bannari Amman Inst. of Technol., Sathyamangalam, India
fYear :
2014
fDate :
27-28 Feb. 2014
Firstpage :
1
Lastpage :
6
Abstract :
High speed content addressable memory design has high speed search function in a single clock. Parallel match line is used to compare. In robust Low power sense amplifier and high speed are highly sought-after in CAM designs. The value is given to search engine and its finds the value where its present. In the existing parity bit is introduced that leads to delay reduction at a cost of less than area. Furthermost in the proposed system PMOS transistor is used and cascaded and then output is found. Deadline is used in the proposed system to identify if the value is not present in the system.
Keywords :
MOSFET; content-addressable storage; CAM design; PMOS transistor; computer aided manufacturing; content addressable memory; parallel match line; parity bit; positive metal oxide semiconductor; search function; sensing delay reduction; Associative memory; Computer aided manufacturing; Computer architecture; Delays; Microprocessors; Power demand; Sensors; PMOS; content addressable memory (CAM); match-line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Communication and Embedded Systems (ICICES), 2014 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-3835-3
Type :
conf
DOI :
10.1109/ICICES.2014.7034040
Filename :
7034040
Link To Document :
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