DocumentCode :
2611562
Title :
Improved backside hydrogenation on semicrystalline silicon solar cells by RF plasma
Author :
Soler, M.G. ; Pereyra, I. ; Fonseca, F. ; Andrade, A.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ., Brazil
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
650
Abstract :
The results obtained from the optimization of the backside hydrogenation on semicrystalline silicon solar cells by RF plasma process are described. Process variables were the hydrogen pressure and the treatment time. Solar cells, photocurrent, and photovoltage, were increased after treatment without generating front side defects, which reduce the fill factor, and consequently the conversion efficiency was improved. The experiments show that backside hydrogenation for semicrystalline silicon solar cells is very effective. The short-circuit current density shows relative increases of over 40% for cells with initial photocurrent values smaller than 18 mA/cm2 after the hydrogen treatment. For solar cells fabricated on solar grade substrates, photocurrent values increased even more, reaching +95%
Keywords :
elemental semiconductors; hydrogen; semiconductor doping; silicon; solar cells; AlGaAs; GaAs; InAlAs; InP; RF plasma; Si; backside hydrogenation; conversion efficiency; photocurrent; photovoltage; semicrystalline silicon solar cells; short-circuit current density; Hydrogen; Inductors; Passivation; Photoconductivity; Photovoltaic cells; Plasma immersion ion implantation; Plasma sources; Radio frequency; Silicon; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111700
Filename :
111700
Link To Document :
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