DocumentCode
2611565
Title
Study of the Wigner function boundary conditions at different barrier heights
Author
Savio, Andrea ; Poncet, Alain
Author_Institution
Lyon Inst. of Nanotechnol., INSA Lyon, Villeurbanne, France
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
163
Lastpage
166
Abstract
In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.
Keywords
Schrodinger equation; Wigner distribution; semiconductor device models; wave functions; Schrodinger equation; Wigner function boundary conditions; Wigner transport equation; barrier heights; device simulation; double barrier device; numerical discrepancy; single barrier device; wavefunction; Boundary conditions; Equations; Mathematical model; Numerical models; Periodic structures; Resonant tunneling devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604539
Filename
5604539
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