DocumentCode
2611636
Title
Cold crucible induction casting of semiconductor silicon for solar cell
Author
Kaneko, Kyojiro ; Misawa, Teruoki ; Tabata, Kazuyoshi
Author_Institution
Osaka Titanium Co. Ltd., Amagasaki, Japan
fYear
1990
fDate
21-25 May 1990
Firstpage
674
Abstract
Cold-crucible induction casting of silicon for solar cell material was performed. In the casting, molten silicon was heated and pinched electromagnetically, allowing the metal to avoid contact with the crucible wall. Hence, impurities were prevented and crucible consumption was unnecessary. The cold crucible used was an open-bottom type, having an 85 mm×85 mm cross section. The silicon material was fed continuously from the open top of the crucible, and the ingot was pulled down at a rate of 1.0 to 4.0 mm/min. Solar cell efficiencies above 13% were obtained, equal to conventional mold methods using cast silicon
Keywords
casting; elemental semiconductors; induction heating; semiconductor device manufacture; silicon; solar cells; Si; cold crucible; electromagnetic pinch; fabrication; induction casting; moulding; semiconductors; solar cell; Casting; Contamination; Electromagnetic heating; Impurities; Photovoltaic cells; Photovoltaic systems; Silicon; Solar heating; Solar power generation; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111705
Filename
111705
Link To Document