DocumentCode
2611668
Title
Screening of Time-Dependent Dielectric Breakdowns
Author
Anolick, Eugene S. ; Chen, Li-Yu
Author_Institution
International Business Machines Corporation, A41/052, P.O. Box 360, Poughkeepsie, NY 12602
fYear
1982
fDate
30011
Firstpage
238
Lastpage
243
Abstract
A study of screening effect on MSOS dots has shown the effect of time as well as stress on the screening of time-dependent breakdown. A model is described which is based on a reduction of allotted time-to-fail for a given area.
Keywords
Dielectric breakdown; Dielectric devices; Electric breakdown; Fabrication; Life testing; Probes; Semiconductor device modeling; Semiconductor process modeling; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.361935
Filename
4208453
Link To Document