DocumentCode
2611704
Title
Attaining Low Moisture Levels in Hermetic Packages
Author
White, Malcolm L. ; Striny, Kurt M. ; Sammons, Robert E.
Author_Institution
Bell Telephone Laboratories, 555 Union Boulevard, Allentown, PA 18103, 215-439-7457
fYear
1982
fDate
30011
Firstpage
253
Lastpage
259
Abstract
Because of occasional high moisture contents (>5000 ppmv) in hermetically sealed, side brazed multilayer ceramic packages, an investigation was carried out to elucidate this effect. The furnaces used for solder sealing of the metal lid on the package were found to have less than 20 ppmv moisture in the nitrogen used as the ambient, so the initial atmosphere in the packages was very dry. Using carefully calibrated moisture sensor chips in the packages it was found that empty packages (no chips) contained from 1000 to 5000 ppmv of water vapor after furnace sealing, regardless of any prebaking of the package or any attempt to prevent readsorption of moisture before sealing. When a chip was die bonded into the package with a gold/silicon eutetic, the moisture level dropped to 100-1000 ppmv after sealing. When a gold/tin eutectic was used for the die bonding, the moisture level dropped even further to less than 20 ppmv after sealing. These low levels of moisture were achieved with no prebaking of parts and no attempt to avoid moisture adsorption before going into the sealing furnace. The proposed mechanism to explain the above observations is the reaction of moisture, always present when a package is heated during the sealing cycle, with silicon that dissolves from the chip in the gold/silicon or gold/tin eutectic used for die bonding: Si + 2H2O ¿ SiO2 + 2H2 With the gold/silicon eutectic, the only silicon available for this reaction is that on the surface of the eutectic material.
Keywords
Ceramics; Furnaces; Gold; Hermetic seals; Microassembly; Moisture; Nonhomogeneous media; Packaging; Silicon; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.361938
Filename
4208456
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