Title :
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
Author :
Hong, Sung-Min ; Jungemann, Christoph
Author_Institution :
Bundeswehr Univ., Neubiberg, Germany
Abstract :
The Pauli principle is included in a deterministic Boltzmann solver for multi-dimensional semiconductor devices. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for semiconductor devices. The impact of the Pauli principle is numerically investigated for a scaled SiGe HBT.
Keywords :
Boltzmann equation; Ge-Si alloys; Newton-Raphson method; heterojunction bipolar transistors; semiconductor device models; Newton-Raphson scheme; Pauli principle; SiGe; deterministic Boltzmann equation solver; multidimensional semiconductor device; nonlinear Boltzmann equation; scaled SiGe HBT; Boltzmann equation; Distribution functions; Mathematical model; Numerical models; Photonic band gap; Scattering; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604547
