DocumentCode
2611806
Title
Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS
Author
Heiser, T. ; Mesli, A. ; Siffert, P.
Author_Institution
CRN, Strasbourg, France
fYear
1990
fDate
21-25 May 1990
Firstpage
705
Abstract
Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. The optimum working conditions are discussed, and the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Gold- and iron-related defect interactions with grain boundaries are investigated by means of SMCTS
Keywords
bicrystals; crystal defects; elemental semiconductors; grain boundaries; impurities; minority carriers; silicon; surface treatment; Au; Fe; Si; bicrystals; defects; grain boundaries; metallic impurities; scanning minority carrier transient spectroscopy; surface preparation; Capacitance; Electron traps; Employee welfare; Impurities; Laser beams; Semiconductor diodes; Silicon; Spatial resolution; Spectroscopy; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111712
Filename
111712
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