DocumentCode
2611807
Title
A simple and efficient method for the calculation of carrier-carrier scattering in Monte-Carlo simulations
Author
Lee, Wonsok ; Ravaioli, Umberto
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
131
Lastpage
134
Abstract
The analysis of the carrier-carrier scattering is getting more important and it can be done by the particle-particle-particle-mesh (P3M) algorithm. A problematic part of the algorithm is to avoid double-counting of the pair forces in short-range. Here, we solve the problem by introducing an efficient numerical method to the algorithm. The improvements in accuracy and applicability are confirmed with various test cases. In addition, the modified P3M method is integrated with a 3D ensemble Monte Carlo (EMC) simulator and applied to the device simulations. The results are compared with those of the PM (particle-mesh)-EMC approach, which reveals the limitations of the scattering rate based methods and the importance of the P3M method to treat carrier interactions.
Keywords
Monte Carlo methods; impurity scattering; 3D ensemble Monte Carlo simulator; Monte-Carlo simulations; carrier interactions; carrier-carrier scattering analysis; device simulations; double-counting avoidance; modified P3M method; numerical method; particle-mesh-EMC approach; particle-particle-particle-mesh algorithm; scattering rate based methods; short-range pair forces; Electric fields; Electromagnetic compatibility; Force; Mathematical model; Monte Carlo methods; Numerical models; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604550
Filename
5604550
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