Title :
A comparative 3D simulation approach with extensive experimental Vt/Avt data and analysis of LER/RDF/reliability of CMOS SRAMs at 40-nm node and beyond
Author :
Okada, Takako ; Yoshimura, Hisao ; Aikawa, Hisashi ; Sengoku, Mitsuhiro ; Fujii, Osamu ; Oyamatsu, Hisato
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
With the advent of CMOS SRAMs manufactured at 40-nm node and beyond, variability of threshold voltage (Vt) and technology-dependent factor in Pelgrom plot (Avt) has become a serious issue in the practical design and fabrication phases. This paper presents (i) a comparative 3D simulation approach using extensive measured data to clarify the magnitudes of LER and RDF effects in generic processes, (ii) estimation of magnitudes of LER, RDF and FER (metallurgical junction front edge roughness) effects, (iii) simulation of LER, RDF and FER in a FinFET device to evaluate practical feasibility and (iv) analysis of size-dependent NBTI-induced Vt fluctuation as a possible application of this method.
Keywords :
CMOS memory circuits; MOSFET; SRAM chips; circuit reliability; circuit simulation; 3D simulation; CMOS SRAM; FinFET device; LER/RDF/reliability; Pelgrom plot; Data models; Fluctuations; Impurities; Logic gates; Resource description framework; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604551
