Title :
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
Author :
Kovac, U. ; Dideban, D. ; Cheng, B. ; Moezi, N. ; Roy, G. ; Asenov, A.
Author_Institution :
Dept. Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Statistical variability (SV) is one of the fundamental limiting factors for future nano- CMOS scaling and integration of. Variability aware design is essential to achieve reasonable yield and reliability in the manufacture of circuit and systems. To develop effective variability aware design technologies it is essential to have a reliable and accurate statistical compact modeling strategy. In this study a nonlinear power method (NPM) based statistical compact modeling strategy is presented. The results indicate that statistical compact model parameters generated by a NPM approach are significantly better at capturing the tails and non-normal shape of statistical parameter distributions when compared with principal component analysis (PCA).
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit technology; integrated circuit yield; semiconductor device models; semiconductor device reliability; integrated circuit reliability; integrated circuit yield; nano-CMOS scaling; nonlinear power method; nonnormal distributed PSP compact model parameters; statistical compact modeling; statistical generation; statistical parameter distributions; statistical variability; variability aware design technology; Biological system modeling; Computational modeling; Correlation; Gaussian distribution; Logic gates; Principal component analysis; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604552