Title :
Influence of oxygen on polycrystalline silicon sheet [solar cells]
Author :
Hide, I. ; Matsuyama, T. ; Suzuki, M. ; Yamashita, H. ; Suzuki, T. ; Moritani, T. ; Maeda, Y.
Author_Institution :
Hoxan Corp., Sapporo, Japan
Abstract :
The influence of oxygen on polycrystalline silicon produced by the spin-cast method was investigated. After the spin-cast process, solar cells are made using various thermal processes, such as diffusion. The oxygen concentrations in crystals prepared by the spin-cast process have been measured, and its effect on the characteristics of the crystal and solar cell properties was investigated. It was confirmed that if the oxygen concentration was more than 7.5×1017 atoms/cm 3 after the cell fabrication process, the resistivity of the crystal became higher than before the cell fabrication process. To obtain solar cells which have an energy conversion efficiency of more than 10%, the oxygen content should be less than 7.5×1017 atoms/cm3
Keywords :
crystal defects; diffusion in solids; elemental semiconductors; impurities; oxygen; silicon; solar cells; Si:O; diffusion; fabrication; polycrystalline; resistivity; semiconductor; solar cells; spin-cast method; thermal processes; Atomic measurements; Boron; Coatings; Conductivity; Crystals; Energy conversion; Oxygen; Photovoltaic cells; Silicon; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111714