Title :
Basic Problems for Electromigration in VLSI Applications
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
Abstract :
The increasing electromigration requirements for interconnecting lines in VLSi technology have been assessed according to the trend in device scaling. Problems introduced by the decreasing line dimension and increasing current density are classified to be material-related or geometry-related. The nature of these problems are briefly discussed and their impact on device reliability is indicated.
Keywords :
Conductors; Current density; Delay; Electromigration; FETs; Grain size; Heating; Integrated circuit interconnections; Temperature; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
DOI :
10.1109/IRPS.1982.361947
