DocumentCode :
2611878
Title :
Numerical investigation of the total SOA of trench field-plate LDMOS devices
Author :
Poli, S. ; Reggiani, S. ; Baccarani, G. ; Gnani, E. ; Gnudi, A. ; Denison, M. ; Pendharkar, S. ; Wise, R.
Author_Institution :
DEIS, Univ. of Bologna, Bologna, Italy
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
111
Lastpage :
114
Abstract :
A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safe-operating area (SOA), hot-carrier stress (HCS) reliability, self-heating effects (SHE) and thermal SOA.
Keywords :
MIS devices; hot carriers; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; technology CAD (electronics); thermal properties; SOA; electrical properties; electrical safe-operating area; hot-carrier stress reliability; numerical investigation; self-heating effects; thermal properties; trench field-plate LDMOS devices; Fingers; Logic gates; Performance evaluation; Semiconductor optical amplifiers; Silicon; Stress; Three dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604555
Filename :
5604555
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2611878
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