Title :
Modeling of the grain boundary potential for poly-Si [solar cells]
Author :
Chen, Z. ; Burton, L.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
New relations for the polysilicon grain boundary (GB) potential barrier height (Vg) for both the dark and light cases are developed. The dependencies of electron lifetime (τ), mobility (μ), and diffusion length (L) on Vg , depth, illumination level, and grain size are discussed. It is shown that Vg increases with depth under solar illumination, whereas the transport parameters decrease drastically. These results also show that under high-level illumination, V g is reduced and the minority transport parameters are improved significantly, with a flatband condition (Vg=0) appearing under certain conditions
Keywords :
carrier lifetime; elemental semiconductors; grain boundaries; grain size; minority carriers; silicon; solar cells; Si; depth; diffusion length; electron lifetime; grain boundary potential; grain size; illumination level; minority transport parameters; mobility; polycrystalline; potential barrier height; semiconductor; solar illumination; Doping; Electron mobility; Grain boundaries; Grain size; Impurities; Lighting; Optical losses; Photovoltaic cells; Poisson equations; Space charge;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111717
