Title :
Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach
Author :
Laux, Steven E. ; Fischetti, Massimo V.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A numerical model for electronic transport in semiconductor devices is summarized and a recently published model-based comparison of idealized submicron MOSFETs which are nominally the same except for differing substrate material is reviewed. Five substrate materials-Ge, Si, GaAs, InP, and In0.53Ga0.47As are considered, and the logic switching performance of the devices is compared. These simulations were performed with the program DAMOCLES (device analysis using Monte Carlo et Poisson solver), implementing a solid physical basis within a flexible device modeling framework. In addition, an analysis utilizing a GaAs SISFET is performed
Keywords :
III-V semiconductors; Monte Carlo methods; digital simulation; electronic engineering computing; elemental semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor device models; GaAs; GaAs SISFET; Ge; In0.53Ga0.47As; InP; Si; coupled Monte Carlo-Poisson approach; electronic transport; flexible device modeling framework; logic switching performance; model-based comparison; numerical model; program DAMOCLES; semiconductors; small semiconductor devices; solid physical basis; submicron MOSFETs; substrate materials; Gallium arsenide; Indium phosphide; Logic devices; MOSFETs; Numerical models; Performance analysis; Semiconductor devices; Semiconductor materials; Solid modeling; Substrates;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170003
