Title :
Hot electrons cathodes in high speed three-terminal devices: do they really make a difference?
Author :
Weinzierl, S.R. ; Krusius, J.P.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Using a two-dimensional self-consistent ensemble Monte Carlo method, the effectiveness of the abrupt heterojunction, planar doped barrier, and doped homojunction as hot electron cathodes in realistic high speed semiconductor device structures is investigated. Both unipolar (vertical FET) and bipolar (heterojunction bipolar transistor) structures are examined, and results of device parameter optimization are given. Steady-state and transient device characteristics are compared, and low temperature (77 K) results are given. It is found that, when properly designed, hot electron cathodes can significantly improve device performance, especially at low temperatures. This potential has not always been realized in fabricated devices because of the complexity of the design
Keywords :
Monte Carlo methods; field effect transistors; heterojunction bipolar transistors; hot electron transistors; semiconductor device models; 2D model; 77 K; HBT; abrupt heterojunction; design complexity; device parameter optimization; device performance; doped homojunction; ensemble Monte Carlo method; heterojunction bipolar transistor; high speed semiconductor device structures; high speed three-terminal devices; hot electron cathodes; low temperatures; planar doped barrier; transient device characteristics; vertical FET; Cathodes; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Ohmic contacts; Semiconductor devices; Space charge; Steady-state; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170005
