Title :
Raman scattering study of CuInSe2 films prepared by three-source RF-sputtering and by selenization of Cu/In/Se stacked layers
Author :
Yamanaka, S. ; Tanda, M. ; Horino, K. ; Ito, K. ; Yamada, A. ; Konagai, M. ; Takahashi, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
CuInSe2 thin films prepared by three-source RF-sputtering and selenization of Cu/In/Se stacked layers were characterized by Raman spectroscopy. The crystallinity of polycrystalline thin film CuInSe2 was accurately evaluated from their Raman spectra. The films with good crystallinity and uniform large-size grains show a very sharp peak at 174 cm-1 in the Raman spectra. The Raman spectroscopy was found to be a good technique to study formation of the CuInSe2 chalcopyrite phase in the selenization process. The formation of the CuInSe2 chalcopyrite phase occurs at the critical temperature, slightly above 250°C
Keywords :
Raman spectra of inorganic solids; copper compounds; indium compounds; sputtered coatings; ternary semiconductors; CuInSe2; RF-sputtering; Raman spectroscopy; chalcopyrite phase; crystallinity; grains; polycrystalline; selenization; semiconductors; Annealing; Crystallization; Glass; Photovoltaic cells; Raman scattering; Spectroscopy; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111722
