Title :
Band-coupling effect on the frequency limit of resonant-tunneling diodes
Author :
Yang, Rui Q. ; Xu, J.M.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
The effect of the band-coupling between the conduction and valence bands on the frequency limit of resonant tunneling oscillators is studied. An analytical two-band sequential tunneling model based on the dot vector product of k and p is presented. For a conventional double-barrier resonant tunneling diode, the results are compared with that of the one-band sequential tunneling model. It is shown that, by taking into account the band-coupling effect, the frequency limit could be many times greater than that predicted by the one-band model
Keywords :
conduction bands; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; tunnel diodes; valence bands; RTD; band-coupling effect; conduction band; frequency limit; resonant-tunneling diodes; two-band sequential tunneling model; valence bands; Conducting materials; Diodes; Frequency estimation; Gallium arsenide; Oscillators; Photonic band gap; Predictive models; Resonant frequency; Resonant tunneling devices; Wideband;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170008
