Title :
Simulated performance optimization of GaAs MESFET amplifiers
Author :
Winslow, T.A. ; Trew, R.J. ; Gilmore, P. ; Kelley, C.T.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Abstract :
A robust global optimizer that is capable of optimizing linear, small-signal and nonlinear, large-signal figures of merit (FOMs) in the presence of a high density of local minima and noise is presented. The optimizer is linked with a large-signal MESFET model and used to investigate the optimization process and parameter extraction for GaAs MESFET amplifiers given the complex structure of the RF performance FOM hypersurface. It is demonstrated that it is necessary to perform optimization using all available physical parameters simultaneously as opposed to sequential optimization using only a few parameters at a time
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; microwave amplifiers; optimisation; radiofrequency amplifiers; semiconductor device models; solid-state microwave circuits; CAD; GaAs; MESFET amplifiers; RF performance; figures of merit; large-signal MESFET model; parameter extraction; robust global optimizer; simulated performance optimisation; Circuit testing; Design automation; Design optimization; Gallium arsenide; MESFET circuits; Noise robustness; Radio frequency; Radiofrequency amplifiers; Semiconductor process modeling; Signal processing;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170009
