DocumentCode
2612061
Title
Electromigration Characterization of DC Magnetron-Sputtered AL-SI Metallization
Author
Fischer, F. ; Neppl, F. ; Oppolzer, H. ; Schwabe, U.
Author_Institution
Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
fYear
1983
fDate
30407
Firstpage
40
Lastpage
43
Abstract
The residual gas dependence of the life time of dc magnetron-sputtered Al-Si (1.2%) interconnects under temperature/current stress was investigated. Whereas the interconnect life time decreased with increasing H2O partial pressure, it increased with O2 partial pressure up to 4×1O¿9 Torr. Narrow interconnects were more sensitive to the residual gas conditions during metal deposition than wide ones. The Al-Si films were further characterized with respect to microstructure, reflectivity and residual resistivity. Correlations between life time and Al-Si-properties available immediately after film deposition are discussed. The best correlation existed with the residual resistivity.
Keywords
Conductivity; Electromigration; Metallization; Microstructure; Optical films; Reflectivity; Residual stresses; Temperature dependence; Temperature sensors; Water;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361959
Filename
4208480
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