DocumentCode :
2612074
Title :
Shunt effect in polycrystalline GaAs solar cells
Author :
Honsberg, Christiana ; Bernett, Allen
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
772
Abstract :
Thin-film polycrystalline GaAs solar cells have the potential for reduced cost while retaining high efficiency. However, solar cells made from polycrystalline GaAs have historically had poor open-circuit voltages. Models that account for these low voltages suggest that in order to make solar cells with high voltages it is necessary to use material with very large grains. As an alternative cause for the low voltages, the presence of Schottky barriers due to inverted grain boundaries is proposed. If this is the case, the requirements on grain size will be reduced. The existence of grain boundary inversion in polycrystalline solar cells is demonstrated, and it is shown that contacting grain boundaries leads to lower voltages
Keywords :
III-V semiconductors; Schottky effect; gallium arsenide; grain boundaries; grain size; solar cells; Schottky barriers; cost; efficiency; grain size; inverted grain boundaries; open-circuit voltages; polycrystalline; polycrystalline GaAs solar cells; Circuits; Conducting materials; Degradation; Gallium arsenide; Grain boundaries; Lattices; Low voltage; Metallization; Photovoltaic cells; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111725
Filename :
111725
Link To Document :
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