Thin film CdTe homojunctions by MOCVD [solar cells]

Author

Chu, T. ; Chu, Shirley ; Ferekides, C. ; Brit, J. ; Wu, C.

Author_Institution

Univ. of South Florida, Tampa, FL, USA

fYear

1990

fDate

21-25 May 1990

Firstpage

777

Abstract

Polycrystalline solar cell thin-films of cadmium telluride (CdTe) have been deposited on glass and SnO₂:F/glass substrates at 350°-400°C by the reaction of dimethylcadmium (DMCd) and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The DMCd/DIPTe molar ratio in the reaction mixture is an important factor, affecting the deposition rate, conductivity type, and the incorporation of dopants. The deposited films are p-type at a DMCd/DIPTe molar ratio of 0.6 or less and are n-type at higher ratios. Extrinsically doped CdTe films have been deposited for the first time by using ethyldimethylindium and arsine as the n- and p-type dopant, respectively. The electrical properties of undoped and doped CdTe films have been characterized. Thin-film CdTe homojunctions have been prepared by the successive in-situ deposition of extrinsically doped n- and p-CdTe films on SnO₂:F/glass substrates and their properties investigated

Keywords

CVD coatings; II-VI semiconductors; cadmium compounds; semiconductor doping; solar cells; vapour phase epitaxial growth; 350 to 400 degC; CdTe; MOCVD; SnO₂:F; arsine; conductivity; deposition rate; diisopropyltellurium; dimethylcadmium; dopants; electrical properties; ethyldimethylindium; glass; semiconductor; solar cells; Atmosphere; Cadmium compounds; Conductivity; Glass; Hydrogen; MOCVD; Photovoltaic cells; Substrates; Thin films; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111726

Filename

111726