Title :
A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices
Author :
Noyori, M. ; Nakata, Y. ; Kuninobu, S.
Author_Institution :
Matsushita Electric Industrial Co., Ltd., Central Research Laboratory, 3-15 Yakumo-nakamachi, Moriguchi, Osaka, JAPAN, 570. 06-909-1121
Abstract :
In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.
Keywords :
CMOS technology; Impurities; Laboratories; Large scale integration; Life estimation; Moisture; Plastics industry; Temperature dependence; Testing; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361962
