DocumentCode
2612094
Title
A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices
Author
Noyori, M. ; Nakata, Y. ; Kuninobu, S.
Author_Institution
Matsushita Electric Industrial Co., Ltd., Central Research Laboratory, 3-15 Yakumo-nakamachi, Moriguchi, Osaka, JAPAN, 570. 06-909-1121
fYear
1983
fDate
30407
Firstpage
60
Lastpage
65
Abstract
In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.
Keywords
CMOS technology; Impurities; Laboratories; Large scale integration; Life estimation; Moisture; Plastics industry; Temperature dependence; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361962
Filename
4208483
Link To Document